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Freescale Semiconductor Technical Data
Document Number: MW6S010N Rev. 3, 5/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. * Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain -- 18 dB Drain Efficiency -- 32% IMD -- - 37 dBc * Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip RF Feedback for Broadband Stability * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MW6S010NR1 MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MW6S010NR1
CASE 1265A - 02, STYLE 1 TO - 270- 2 GULL PLASTIC MW6S010GNR1
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +68 - 0.5, +12 61.4 0.35 - 65 to +175 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 10 W PEP Symbol RJC Value (1.2) 2.85 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MW6S010NR1 MW6S010GNR1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A A III
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 125 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.3 Adc) Dynamic Characteristics Input Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 23 10 0.32 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.5 -- -- 2.3 3.1 0.27 3 -- 0.35 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps D IMD IRL 17.5 31 -- -- 18 32 - 37 - 18 20.5 -- - 33 - 10 dB % dBc dB
Typical Performances (In Freescale 450 MHz Demo Board, 50 hm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP, 420- 470 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps D IMD IRL -- -- -- -- 20 33 - 40 - 10 -- -- -- -- dB % dBc dB
MW6S010NR1 MW6S010GNR1 2 RF Device Data Freescale Semiconductor
B1 VBIAS + C2 + C3 C4 C6 C7 C10
C11 C12 C13 L1 RF OUTPUT + C15 C16 + C18 + C19 VSUPPLY
RF INPUT
R1 Z1 C1 Z2 Z3 Z4
DUT
Z5
Z6 C20
Z7
C14 C5 C8 C9
C17
Z1 Z2 Z3 Z4
0.073 x 0.223 Microstrip 0.112 x 0.070 Microstrip 0.213 x 0.500 Microstrip 0.313 x 1.503 Microstrip
Z5 Z6 Z7 PCB
0.313 x 0.902 Microstrip 0.073 x 1.080 Microstrip 0.073 x 0.314 Microstrip Rogers ULTRALAM 2000, 0.031, r = 2.55
Figure 1. MW6S010NR1(GNR1) Test Circuit Schematic -- 900 MHz
Table 6. MW6S010NR1(GNR1) Test Circuit Component Designations and Values -- 900 MHz
Part B1 C1, C6, C11, C20 C2, C18, C19 C3, C16 C4, C15 C5, C8, C17 C7, C12 C9, C10, C13 C14 L1 R1 Ferrite Bead 47 pF Chip Capacitors 22 F, 35 V Tantalum Capacitors 220 F, 63 V Electrolytic Capacitors, Radial 0.1 F Chip Capacitors 0.8- 8.0 pF Variable Capacitors, Gigatrim 24 pF Chip Capacitors 6.8 pF Chip Capacitors 7.5 pF Chip Capacitor 12.5 nH Inductor 1 k Chip Resistor Description Part Number 2743019447 100B470JP500X T491D226K035AS 13668221 CDR33BX104AKWS 272915L 100B240JP500X 100B6R8JP500X 100B7R5JP500X A04T- 5 CRCW12061001F100 Manufacturer Fair- Rite ATC Kemet Phillips Kemet Johanson ATC ATC ATC Coilcraft Vishay - Dale
MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 3
C3 C7 C4 C10 C2 B1 C6 C11 C13 R1 C1 C9 L1 C12 C16 C15
C18
C19
C20 C17 C14
C5
C8
MW6S010N
Figure 2. MW6S010NR1(GNR1) Test Circuit Component Layout -- 900 MHz
MW6S010NR1 MW6S010GNR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 900 MHz
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) -8 48 44 40 36 32 28 24 20 16 910 920 930 940 950 960 IMD Gps VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 125 mA, 100 kHz Tone Spacing -16 -18 -20 -22 -24 -26 970 IRL D -10 -12 -14
f, FREQUENCY (MHz)
Figure 3. Two - Tone Wideband Performance @ Pout = 10 Watts
20 -10 -20 -30 -40 7th Order -50 -60 -70 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 28 Vdc, IDQ = 125 mA f = 945 MHz, Two-Tone Measurements 100 kHz Tone Spacing 3rd Order
IDQ = 190 mA
19 Gps, POWER GAIN (dB) 125 mA 18 90 mA
IMD, INTERMODULATION DISTORTION (dBc)
5th Order
17
16 15
VDD = 28 Vdc, f = 945 MHz Two-Tone Measurements 100 kHz Tone Spacing 0.1 1 10 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 4. Two - Tone Power Gain versus Output Power
Figure 5. Intermodulation Distortion Products versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-15 -20 -25 -30 -35 -40 -45 -50 -55 0.1 1 5th Order 7th Order 3rd Order VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 125 mA, Two-Tone Measurements (f1+f2)/2 = Center Frequency = 945 MHz
48 Ideal Pout, OUTPUT POWER (dBm) 46 P3dB = 43.14 dBm (20.61 W)
44
P1dB = 42.23 dBm (16.71 W) Actual
42 VDD = 28 Vdc, IDQ = 125 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 945 MHz 19 21 23 25 27 29
40 38
10
100
TWO-TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulse CW Output Power versus Input Power MW6S010NR1 MW6S010GNR1
RF Device Data Freescale Semiconductor
5
TYPICAL CHARACTERISTICS -- 900 MHz
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc IDQ = 125 mA f = 945 MHz -10
40
-20 ACPR (dBc) D, DRAIN EFFICIENCY (%)
30 Gps D 10 ACPR 0 0.1 1 Pout, OUTPUT POWER (WATTS) AVG. 10
-30
20
-40
-50 -60
Figure 8. Single - Carrier CDMA ACPR, Power Gain and Power Added Efficiency versus Output Power
20 -30_C 19 Gps, POWER GAIN (dB) TC = -30_C Gps D 25_C 85_C 40 50
18
25_C 85_C
30
17
20
16
15 0.1
1
10
VDD = 28 Vdc 10 IDQ = 125 mA f = 945 MHz 0 100
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added Efficiency versus Output Power
24 IDQ = 125 mA f = 945 MHz Gps, POWER GAIN (dB) 18 16 S21 (dB) 17 12 8 16 VDD = 12 V 0 2 4 16 V 6 20 V 24 V 28 V 32 V 4 0 500 VDD = 28 Vdc Pout = 10 W CW IDQ = 125 mA 600 700 800 900 S11 -20 -25 1000 1100 1200 f, FREQUENCY (MHz) -5 -10 -15 S11 (dB) 20 S21 5 0
19
15
8
10
12
14
16
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
Figure 11. Broadband Frequency Response
MW6S010NR1 MW6S010GNR1 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
108 MTTF FACTOR (HOURS x AMPS2)
107
106
105 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 7
Zo = 25
f = 980 MHz f = 980 MHz Zsource Zload f = 800 MHz f = 800 MHz
VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP f MHz 800 820 840 860 880 900 920 940 960 980 Zsource 3.1 + j1.9 2.8 + j1.7 2.7 + j2.2 3.1 + j3.4 3.3 + j3.8 2.9 + j3.7 2.8 + j4.4 3.0 + j4.7 3.2 + j4.9 3.6 + j5.2 Zload 10.1 + j2.3 8.3 + j2.5 8.2 + j3.3 9.8 + j4.8 10.6 + j5.6 9.5 + j5.5 10.1 + j5.9 11.0 + j6.4 11.8 + j6.6 12.1 + j7.1
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance -- 900 MHz MW6S010NR1 MW6S010GNR1 8 RF Device Data Freescale Semiconductor
T1 VBIAS
R1 + C1 R2 R5 + C2 T2 C3 B2 C13 B1 + C4 C14 C15 VSUPPLY
R3 R4
R6 RF INPUT DUT Z1 Z2 Z3 C9 Z4 Z5 Z6
L1 Z7 C10 Z8
RF OUTPUT
C12
C11
C6
C5
C7
C8
Z1 Z2 Z3 Z4, Z7
0.540 x 0.080 Microstrip 0.365 x 0.080 Microstrip 0.225 x 0.080 Microstrip 0.440 x 0.080 Microstrip
Z5 Z6 Z8 PCB
0.475 x 0.330 Microstrip 0.475 x 0.325 Microstrip 1.250 x 0.080 Microstrip Rogers ULTRALAM 2000, 0.030, r = 2.55
Figure 14. MW6S010NR1(GNR1) Test Circuit Schematic -- 450 MHz
Table 7. MW6S010NR1(GNR1) Test Circuit Component Designations and Values -- 450 MHz
Part B1, B2 C1 C2, C15 C3, C14 C4, C9, C10, C13 C5 C6, C11 C7, C8, C12 L1 R1 R2 R3 R4 R5 R6 T1 T2 Ferrite Bead 1 F, 35 V Tantalum Capacitor 22 F, 35 V Tantalum Capacitors 0.1 F Chip Capacitors 330 pF Chip Capacitors 4.3 pF Chip Capacitor 0.6- 8.0 pF Variable Capacitors 4.7 pF Chip Capacitors 39 H Chip Inductor 10 Chip Resistor (0805) 1 k Chip Resistor (0805) 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 5 k Potentiometer 1 k Chip Resistor (1206) 5 Volt Regulator, Micro 8 NPN Transistor Description Part Number 2743019447 T491C105K050AS T491X226K035AS C1210C104K5RACTR 700A331JP150X 100B4R3JP500X 27291SL 100B4R7JP500X ISC - 1210 CRCW080510R0F100 CRCW08051001F100 CRCW08051201F100 CRCW08052201F100 1224W CRCW12061001F100 LP2951 BC847ALT1 Manufacturer Fair- Rite Kemet Kemet Kemet ATC ATC Johanson ATC Vishay - Dale Vishay - Dale Vishay - Dale Vishay - Dale Vishay - Dale Bourns Vishay - Dale On Semiconductor On Semiconductor
MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 9
R2 R5 B1
R1
C1 T1 R3 T2 B2 C14 C13 C12 C15
R4 C2 C4 C5 C9 C7 C8 R6 C3
L1
C10 C11
C6
MW6S010N 450 MHz
Figure 15. MW6S010NR1(GNR1) Test Circuit Component Layout -- 450 MHz
MW6S010NR1 MW6S010GNR1 10 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS -- 450 MHz
D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -6 -9 -12 -15 -18 -21 D, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) -4 -6 -8 -10 -12 -14 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 20.4 20.2 20 Gps, POWER GAIN (dB) 19.8 19.6 19.4 19.2 19 18.8 18.6 18.4 400 ALT1 410 420 430 440 450 460 470 480 490 D
VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
37 Gps 34 31 28 25 -40 -45 IRL ACPR -50 -55 -60 -65 500
f, FREQUENCY (MHz)
Figure 16. 2 - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg.
19 18.8 18.5 Gps, POWER GAIN (dB) 18.3 18 17.8 17.5 17.3 17 16.8 16.5 400 ALT1 410 420 430 440 450 460 470 480 490 IRL ACPR D
VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
55 Gps 50 45 40 35 -30 -35 -40 -45 -50 -55 500
f, FREQUENCY (MHz)
Figure 17. 2 - Carrier W - CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
25
S11
-5
VDD = 28 Vdc, IDQ = 150 mA, f = 450 MHz, N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
-20 ACPR -30 -40 ALT1 ALT2 -50 -60 -70 -80
20 S21 S21 15 VDD = 28 Vdc Pout = 10 W IDQ = 150 mA
-10 S11
-15
10
-20
5
-25 50 100 150 200 250 300 350 400 450 500 550 600 650 f, FREQUENCY (MHz)
0.1
1 Pout, OUTPUT POWER (WATTS) AVG.
10
Figure 18. Broadband Frequency Response
Figure 19. Single - Carrier N - CDMA ACPR, ALT1 and ALT2 versus Output Power
MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 11
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1 & ALT2, CHANNEL POWER (dBc)
30
0
-10
Zo = 25
f = 500 MHz Zsource
f = 500 MHz
f = 400 MHz f = 400 MHz
Zload
VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP f MHz 400 420 440 460 480 500 Zsource 9.0 + j3.8 8.8 + j5.4 9.6 + j6.6 10.6 + j9.5 10.7 + j12.6 11.5 + j13.9 Zload 15.0 + j1.4 14.3 + j3.3 15.0 + j4.7 16.3 + j7.3 16.4 + j11.1 16.9 + j12.7
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 20. Series Equivalent Source and Load Impedance -- 450 MHz
MW6S010NR1 MW6S010GNR1 12 RF Device Data Freescale Semiconductor
NOTES
MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 13
NOTES
MW6S010NR1 MW6S010GNR1 14 RF Device Data Freescale Semiconductor
NOTES
MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 15
PACKAGE DIMENSIONS
MW6S010NR1 MW6S010GNR1 16 RF Device Data Freescale Semiconductor
MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 17
MW6S010NR1 MW6S010GNR1 18 RF Device Data Freescale Semiconductor
B
E1 E4
2X
D3
2X
PIN ONE ID
L1
GAGE PLANE
aaa
M
CA e D1 L DETAIL Y
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSIONS "D" AND "E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -D-. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 L L1 b1 c1 e aaa INCHES MIN MAX .078 .082 .001 .004 .077 .088 .416 .424 .378 .382 .290 .320 .016 .024 .316 .324 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .018 .024 .01 BSC .193 .199 .007 .011 2 8 .004 MILLIMETERS MIN MAX 1.98 2.08 0.02 0.10 1.96 2.24 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 8.03 8.23 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 4.90 5.06 0.25 BSC 4.90 5.06 0.18 0.28 2 8 0.10
D aaa
M
CA
2X
A1
b1
E bbb
M
CB
A
H
DETAIL Y
A c1 E2 E5 E5 E3
2X
A2
D
SEATING PLANE
PIN 2
D2
PIN 3
RF Device Data Freescale Semiconductor
CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC
BOTTOM VIEW
EXPOSED HEATSINK AREA PIN 1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 1265A - 02 ISSUE B TO - 270 - 2 GULL PLASTIC MW6S010GNR1
MW6S010NR1 MW6S010GNR1 19
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MW6S010NR1 MW6S010GNR1
Rev. 20 3, 5/2006 Document Number: MW6S010N
RF Device Data Freescale Semiconductor

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